n1313 tkim tc-00003050 no. a2232-1/5 semiconductor components industries, llc, 2013 november, 2013 http://onsemi.com NDFP03N150C features ? on-resistance r ds (on)=8 ? (typ.) ? input capacitance ciss=650pf(typ.) ? 10v drive specifications absolute maximum ratings at ta = 25 c parameter symbol conditions ratings unit drain to source voltage v dss 1500 v gate to source voltage v gss 30 v drain current (dc) i d 2.5 a drain current (dc) limited by package i dl 2a drain current (pulse) i dp pw 10 s, duty cycle 1% 5 a allowable power dissipation p d 2w tc=25 c 32 w channel temperature tch 150 c storage temperature tstg - 55 to +150 c avalanche energy (single pulse) * 1 e as 20 mj avalanche current * 2 i av 2 a * 1 v dd =50v, l=10mh, i av =2a (fig.1) * 2 l 10mh, single pulse electrical characteristics at ta = 25 c parameter symbol conditions ratings unit min typ max drain to source breakdown voltage v( br ) dss i d =10ma, v gs =0v 1500 v zero-gate voltage drain current i dss v ds =1200v, v gs =0v 1 ma gate to source leakage current i gss v gs =30v, v ds =0v 100 na cutoff voltage v gs (off) v ds =10v, i d =1ma 2 4 v forward transfer admittance | yfs | v ds =20v, i d =1a 1.9 s static drain to source on-state resistance r ds (on) i d =1a, v gs =10v 8 10.5 input capacitance ciss v ds =30v, f=1mhz 650 pf output capacitance coss 70 pf reverse transfer capacitance crss 20 pf turn-on delay time t d (on) see fig.2 15 ns rise time t r 20 ns turn-off delay time t d (off) 148 ns fall time t f 44 ns continued on next page. n-channel power mosfet 1500v, 2.5a, 10.5 ? , to-220f-3fs orderin g numbe r : ena2232 ordering information see detailed orderin g and shi pp in g information on p a g e 4 of this data shee t . to-220f-3fs stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended oper ating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty.
NDFP03N150C no.a2232-2/5 continued from preceding page. total gate charge qg v ds =200v, v gs =10v, i d =2a 34 nc gate to source charge qgs 4.7 nc gate to drain ?miller? charge qgd 15 nc diode forward voltage v sd i s =2a, v gs =0v 0.78 1.5 v reverse recovery time trr see fig.3 300 ns reverse recovery charge qrr is=2a, vgs=0v, di/dt=100a/ s 1900 nc forward transfer admittance, | y fs | -- s
NDFP03N150C no.a2232-3/5 operation in this area is limited by r ds (on).
NDFP03N150C no.a2232-4/5 package dimensions NDFP03N150Cg to-220f-3fs case 221am issue o unit : mm 1: gate 2: drain 3: source ordering & package information markin g electrical connection device package shipping note NDFP03N150Cg to-220f-3fs sc-67, 50 pcs. / tube pb-free 03n150 c lot no. 1 3 2
NDFP03N150C ps no.a2232-5/5 fig.1 unclamped inductive switching test circuit fig.2 switching time test circuit fig.3 reverse recovery time test circuit on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc). scillc owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of scillc?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc mak es no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability ar ising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequentia l or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s techn ical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorize d for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other appli cation in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of persona l injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture o fthe part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws a nd is not for resale in any manner. note on usage : since the NDFP03N150C is a mosfet product, please avoid using this de vice in the vicinity of highly charged objects.
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